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2SC5171 C5171 ORYGINAŁ new Toshiba

2sc5171

https://img06.shop-pro.jp/PA01310/923/product/158809787.jpg?cmsp_timestamp=20210409110035

Silicon NPN Epitaxial Type 

Power Amplifier Applications
Driver Stage Amplifier Applications

180V, 2A, Silicon NPN Epitaxial Type Transistor.

Features

1. High transition frequency: fT= 200 MHz (typ.)

2. Complementary to 2SA1930

 



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2SC5171 C5171 Toshiba

13,37 zł

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2SC5171 C5171 ORYGINAŁ new Toshiba <p>Polecamy tranzystor sprawdzony do naprawy koncówek mocy</p> <p>2sc5171</p> <p>https://pdf1.alldatasheet.com/datasheet-pdf/view/30348/TOSHIBA/2SC5171.html</p> <p>Silicon NPN Epitaxial Type <br />Power Amplifier Applications <br />Driver Stage Amplifier Applications<br /> <br />Package/Case: TO-220FP-3 <br />Transistor Polarity: NPN <br />Collector- Emitter Voltage VCEO Max: 180 V <br />Collector- Base Voltage VCBO: 180 V <br />Emitter- Base Voltage VEBO: 5 V <br />Maximum DC Collector Current: 2 A <br />Pd – Power Dissipation: 20W <br />Gain Bandwidth Product fT: 200 MHz <br />Minimum Operating Temperature: – 55 C <br />Maximum Operating Temperature: + 150 C <br />Series: 2SC5171 <br />Brand: Toshiba</p> <p>180V, 2A, Silicon NPN Epitaxial Type Transistor.<br />Features</p> <p>1. High transition frequency: fT= 200 MHz (typ.)</p> <p>2. Complementary to 2SA1930</p> <p>Absolute Maximum Ratings</p> <p>1. Collector-base voltage : VCBO = 180 V<br />2. Collector-emitter voltage : VCEO = 180 V<br />3. Emitter-base voltage : VEBO = 5 V<br />4. Collector current : IC = 2 A<br />5. Base current : IB = 1 A</p> <div class="item--characteristics d-flex flex-wrap"> <div class="item--characteristic-name notranslate">  <p>dotyczy</p> <p>oryginalnych tranzystorów</p> <p> </p> </div> </div>
10,87 zł

Polecamy tranzystor sprawdzony do naprawy koncówek mocy

2sc5171

https://pdf1.alldatasheet.com/datasheet-pdf/view/30348/TOSHIBA/2SC5171.html

Silicon NPN Epitaxial Type
Power Amplifier Applications
Driver Stage Amplifier Applications

Package/Case: TO-220FP-3
Transistor Polarity: NPN
Collector- Emitter Voltage VCEO Max: 180 V
Collector- Base Voltage VCBO: 180 V
Emitter- Base Voltage VEBO: 5 V
Maximum DC Collector Current: 2 A
Pd – Power Dissipation: 20W
Gain Bandwidth Product fT: 200 MHz
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Series: 2SC5171
Brand: Toshiba

180V, 2A, Silicon NPN Epitaxial Type Transistor.
Features

1. High transition frequency: fT= 200 MHz (typ.)

2. Complementary to 2SA1930

Absolute Maximum Ratings

1. Collector-base voltage : VCBO = 180 V
2. Collector-emitter voltage : VCEO = 180 V
3. Emitter-base voltage : VEBO = 5 V
4. Collector current : IC = 2 A
5. Base current : IB = 1 A

 

dotyczy

oryginalnych tranzystorów