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2sc5171
Silicon NPN Epitaxial Type
Power Amplifier Applications
Driver Stage Amplifier Applications
180V, 2A, Silicon NPN Epitaxial Type Transistor.
Features
1. High transition frequency: fT= 200 MHz (typ.)
2. Complementary to 2SA1930
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2sc5171
https://pdf1.alldatasheet.com/datasheet-pdf/view/30348/TOSHIBA/2SC5171.html
Silicon NPN Epitaxial Type
Power Amplifier Applications
Driver Stage Amplifier Applications
Package/Case: TO-220FP-3
Transistor Polarity: NPN
Collector- Emitter Voltage VCEO Max: 180 V
Collector- Base Voltage VCBO: 180 V
Emitter- Base Voltage VEBO: 5 V
Maximum DC Collector Current: 2 A
Pd – Power Dissipation: 20W
Gain Bandwidth Product fT: 200 MHz
Minimum Operating Temperature: – 55 C
Maximum Operating Temperature: + 150 C
Series: 2SC5171
Brand: Toshiba
180V, 2A, Silicon NPN Epitaxial Type Transistor.
Features
1. High transition frequency: fT= 200 MHz (typ.)
2. Complementary to 2SA1930
Absolute Maximum Ratings
1. Collector-base voltage : VCBO = 180 V
2. Collector-emitter voltage : VCEO = 180 V
3. Emitter-base voltage : VEBO = 5 V
4. Collector current : IC = 2 A
5. Base current : IB = 1 A
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